MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing
Jintong Wu, Zongwei Xu, Lei Liu, Alexander Hartmaier, Mathias Rommel, K. Nordlund, Tao Wang, Rebecca Janisch, J. Zhao
Abstract
For the first time, the doping efficiency and defect evolution of p-type doping by aluminum in SiC are clarified and distinguished by an MD study.
Topics & Concepts
DopingMaterials scienceAnnealing (glass)IonAluminiumIon implantationOptoelectronicsMetallurgyChemistryOrganic chemistrySilicon Carbide Semiconductor TechnologiesSilicon and Solar Cell TechnologiesSemiconductor materials and devices