Organic Transistor Nonvolatile Memory with Three-Level Information Storage and Optical Detection Functions
Ting Xu, Shuxu Guo, Weihao Qi, Shizhang Li, Meili Xu, Wei Wang
Abstract
, reliable three-level switching endurance over 100 cycles, and stable three-level retention capability over 20 000 s, are achieved in our memory. Furthermore, an imaging system with a nonvolatile information storage function is demonstrated in a 16 × 5 array of FG-OFET NVMs.
Topics & Concepts
Organic field-effect transistorMaterials scienceNon-volatile memoryOptoelectronicsComputer data storageTransistorNAND gateSemiconductor memoryNon-volatile random-access memoryNanotechnologyLogic gateField-effect transistorComputer scienceElectrical engineeringComputer hardwareComputer memoryMemory refreshAlgorithmEngineeringVoltagePerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingAnalytical Chemistry and Sensors