Unveiling Planar Defects in Hexagonal Group IV Materials
Elham Fadaly, Anna Marzegalli, Yizhen Ren, Lin Sun, Alain Dijkstra, Diego de Matteis, Emilio Scalise, Andrey Sarikov, Marta De Luca, Riccardo Rurali, Ilaria Zardo, J. E. M. Haverkort, Silvana Botti, Leo Miglio, Erik P. A. M. Bakkers, Marcel A. Verheijen
Abstract
defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.
Topics & Concepts
StackingPlanarMaterials scienceStacking faultPhotoluminescenceHexagonal crystal systemCrystallographyCrystal (programming language)Band gapCrystallographic defectCrystal structureCondensed matter physicsOptoelectronicsNanotechnologyDislocationChemistryPhysicsComputer scienceProgramming languageOrganic chemistryComputer graphics (images)Semiconductor materials and devicesSilicon Nanostructures and PhotoluminescenceElectronic and Structural Properties of Oxides