Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities
Niloufar Raeis‐Hosseini, Shaochuan Chen, Christos Papavassiliou, Ilia Valov
Abstract
characteristics of ECMs show stable bipolar resistive switching properties with reliable endurance and retention. The resistive switching mechanism results from the formation and rupture of a conductive filament characteristic of ECM. Our results suggest that Zr can be considered a potential active electrode in the ECMs for the next generation of nonvolatile nanoelectronics. We successfully showed that the ECM device can work under AC pulses to emulate the essential characteristics of an artificial synapse by further improvements.
Topics & Concepts
Materials scienceElectrodeOptoelectronicsTantalumNanoelectronicsCyclic voltammetryNon-volatile memoryNanotechnologyElectrochemistryChemistryMetallurgyPhysical chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsNeural dynamics and brain function