High-sensitivity self-powered photodetector based on an in-situ prepared CsPbBr<sub>3</sub> microwire/InGaN heterojunction
Lingling Sun, Jitao Li, Jiajia Han, Ming Meng, Binghui Li, Mingming Jiang
Abstract
Low-dimensional CsPbBr 3 perovskite materials have gained widespread attention, derived from their remarkable properties and potential for numerous optoelectronic applications. Herein, the sample of CsPbBr 3 microwires were prepared horizontally onto n-type InGaN film substrate using an in-plane solution growth method. The resulting CsPbBr 3 microwire/InGaN heterojunction allows for the achievement of a highly sensitive and broadband photodetector. Particularly for the implementation in a self-supplying manner, the best-performing photodetector can achieve a superior On/Off ratio of 4.6×10 5 , the largest responsivity ∼ 800.0 mA/W, a maximum detectivity surpassing 4.6× 10 12 Jones, and a high external quantum efficiency approaching 86.5% upon 405 nm light illumination. A rapid response time (∼ 4.48 ms/7.68 ms) was also achieved. The as-designed CsPbBr 3 microwire/InGaN heterojunction device without any encapsulation exhibits superior comprehensive stability. Besides, the device featuring as a single pixel imaging unit can readily detect simple images under broadband light illumination with a high spatial resolution, acknowledging its outstanding imaging capability. The robust photodetection properties could be derived from the intense absorption of CsPbBr 3 MWs and high-efficiency charge carriers transporting toward the in-situ formed CsPbBr 3 /InGaN heterointerface. The results may offer an available strategy for the in-situ construction of best-performing low-dimensional perovskite heterojunction optoelectronic devices.