Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sup>2</sup>
Xinpei Jia, Junshuai Chai, Jiahui Duan, Xiaoqing Sun, Xianzhou Shao, Jinjuan Xiang, Kai Han, Yanrong Wang, Hao Xu, Xiaolei Wang, Jing Zhang, Wenwu Wang
Abstract
We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with ferroelectric Hf0.5Zr0.5O2/SiO2 gate stacks by split <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> measurement. We find that the recombination of electrons and holes within the gate stacks induces the generation of traps and consequently results in the degradation of the endurance characteristics of the FeFET. Therefore, by floating the body terminal, we suppress the hole injection into the gate stacks and the recombination and improve the endurance characteristics.