A 2.57mW 5.9-8.4GHz Cryogenic FinFET LNA for Qubit Readout
Jean‐Olivier Plouchart, Dereje Yilma, John Timmerwilke, Sudipto Chakraborty, Kevin Tien, Alberto Valdes-Garcia, Daniel J. Friedman
Abstract
A 5.9-8.4GHz LNA intended for use at cryogenic temperatures was implemented in a 14nm FinFET CMOS technology. At 4.1 K, peak LNA gain of 13.4dB is measured at 7.1GHz, with a 3dB bandwidth of 2.5GHz and power consumption of 2.1mW. Also, at 4.1K, measured noise figure from 6 to 8GHz is 0.53-0.57dB and the measured noise temperature is 37.6-41K; power consumption in this set of measurements was 2.57mW.
Topics & Concepts
CMOSPower consumptionBandwidth (computing)OptoelectronicsElectrical engineeringPhysicsMaterials scienceNoise (video)Cryogenic temperatureLow-power electronicsElectronic engineeringPower (physics)Computer scienceEngineeringTelecommunicationsQuantum mechanicsArtificial intelligenceComposite materialImage (mathematics)Radio Frequency Integrated Circuit DesignAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices