Atomic–layer–confined multiple quantum wells enabled by monolithic bandgap engineering of transition metal dichalcogenides
Yoon Seok Kim, Sojung Kang, Jae‐Pil So, Jong Chan Kim, Kangwon Kim, Seunghoon Yang, Yeonjoon Jung, Yong-Jun Shin, Sungwon Lee, Donghun Lee, Jin‐Woo Park, Hyeonsik Cheong, Hu Young Jeong, Hong‐Gyu Park, Gwan‐Hyoung Lee, Chul‐Ho Lee
Abstract
bilayer exhibited the type I band alignment, facilitating as a building block for MQWs. A superlinear enhancement of photoluminescence with increasing the number of QWs was achieved. Furthermore, quantum-confined radiative recombination in MQWs was verified by a large exciton binding energy of 193 meV and a short exciton lifetime of 170 ps. This work paves the way toward monolithic integration of band-engineered heterostructures for 2D quantum optoelectronics.
Topics & Concepts
Transition metalQuantum wellLayer (electronics)Materials scienceBand gapNanotechnologyAtomic layer depositionOptoelectronicsChemistryPhysicsOpticsCatalysisBiochemistryLaser2D Materials and ApplicationsPerovskite Materials and ApplicationsQuantum Dots Synthesis And Properties