Experimental Observation of Anisotropic Valence Band Dispersion in Dinaphtho[2,3-b:2′,3′-<i>f</i>]thieno[3,2-<i>b</i>]thiophene (DNTT) Single Crystals
R. Takeuchi, Seiichiro Izawa, Yuri Hasegawa, Ryohei Tsuruta, Takuma Yamaguchi, Matthias Meißner, S. Ideta, Kiyohisa Tanaka, Satoshi Kera, Masahiro Hiramoto, Yasuo Nakayama
Abstract
Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) is a p-type organic semiconductor that exhibits high charge-carrier mobility and atmospheric stability. Although it has been proposed that the transport mechanism of DNTT is a band transport, the valence band dispersion has not yet been observed experimentally. In this study, we elucidate the valence band structure of DNTT single crystals using angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) along three inequivalent crystallographic directions in the surface Brillouin zone (SBZ). The valence band maximum (VBM) is verified to be positioned at the Γ point, and the ionization energy of a DNTT single crystal is determined to be 5.02 eV at the VBM. The effective mass of hole is derived from the curvature of the experimental valence band at the Γ point in all three directions, where the lowest value of 2.6 (± 0.2)m0 is measured along the Γ–S direction.