Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN
Matthew D. Smith, Xu Li, Michael J. Uren, Iain Thayne, Martin Kuball
Topics & Concepts
SelectivityPolarity (international relations)Inductively coupled plasmaEtching (microfabrication)Etch pit densityPolarMaterials scienceAnalytical Chemistry (journal)Plasma etchingAlloyPlasmaChemistryNanotechnologyLayer (electronics)MetallurgyChromatographyCatalysisQuantum mechanicsBiochemistryAstronomyPhysicsCellGaN-based semiconductor devices and materialsSemiconductor materials and devicesPlasma Diagnostics and Applications