Molecular dynamics simulation of color centers in silicon carbide by helium and dual ion implantation and subsequent annealing
Y. H. Fan, Ying Song, Zongwei Xu, Bing Dong, Jintong Wu, Mathias Rommel, Kun Zhang, J. Zhao, Rui Zhu, Bingsheng Li, Qiang Li, Fengzhou Fang
Topics & Concepts
Materials scienceIon implantationSilicon carbideAnnealing (glass)Vacancy defectSiliconMolecular dynamicsIonFabricationOptoelectronicsMolecular physicsChemical physicsCrystallographyComputational chemistryComposite materialChemistryPathologyAlternative medicineMedicineOrganic chemistryDiamond and Carbon-based Materials ResearchSilicon Carbide Semiconductor TechnologiesIon-surface interactions and analysis