Field‐Free Switching of Perpendicular Magnetization in Low‐Symmetry Materials
Zhonghai Yu, Lihuan Yang, Kaiwei Guo, Pengnan Zhao, Rui Hou, Yang Du, Jia‐Min Lai, Zhiyong Quan, Fei Wang, Xiaohong Xu
Abstract
Abstract Spin‐orbit torque (SOT), which relies on the generation of spin currents from charge currents in materials with strong spin‐orbit coupling, provides a fast and energy‐efficient approach for magnetization manipulation in magnetic memory devices. A critical challenge for SOT‐based devices lies in generating out‐of‐plane spin polarization to eliminate the need for an external magnetic field, enabling all‐electric switching of perpendicular magnetization. In this review, recent advances in generating out‐of‐plane spin currents and achieving field‐free switching of perpendicular magnetization by utilizing materials that break lateral surface crystal symmetries and magnetic symmetries are summarized. Moreover, the observation of out‐of‐plane anti‐damping magnon torques and the realization of all‐electric magnon devices are reported. It is emphasized that, although key components of spintronics devices based on low‐symmetry materials are demonstrated, many promising materials and critical questions remain to be explored. Thus, this area represents a dynamic and promising frontier in spintronics, with substantial potential for advancing future memory and computational technologies.