Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs
Li Zhu, Yongli He, Chunsheng Chen, Ying Zhu, Yi Shi, Qing Wan
Abstract
Neuromorphic devices are of great significance for next generation energy-efficient brain-like computing and perception. Oxide-based photoelectric neuromorphic transistors are very promising due to the proton-related electric-double-layer (EDL) effect and persistent photoconductivity behavior. In this study, indium-gallium-zinc-oxide (IGZO)-based photoelectric neuromorphic thin-film transistors (TFTs) with tunable synaptic plasticity are proposed. Some important synaptic functions, such as excitatory postsynaptic current, multipulse facilitation, and long-term plasticity, can be effectively tuned by the photoelectric synergistic modulation. More importantly, under the photoelectric synergistic modulation, the temporary short-term memory can be converted into permanent long-term memory. And the voltage coordinated modulation can enhance the image in the pixel and the ability of real-time data processing of the input visual information. Our results are very important for the development of photoelectric neuromorphic devices with configurable dynamic functions.