Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors
Kwan‐Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, Jeffrey Zheng, Pariasadat Musavigharavi, Pawan Kumar, Nicholas Trainor, Areej Aljarb, Yi Wan, Hyong Min Kim, Keshava Katti, Seunguk Song, Gwangwoo Kim, Zichen Tang, Jui‐Han Fu, Mariam Hakami, Vincent Tung, Joan M. Redwing, Eric A. Stach, Roy H. Olsson, Deep Jariwala
Topics & Concepts
Materials scienceScalabilityTransistorOptoelectronicsCMOSComputer scienceField-effect transistorNon-volatile memoryFerroelectricityWaferBack end of lineNanotechnologyElectrical engineeringElectronic engineeringVoltageEngineeringDielectricDatabaseAcoustic Wave Resonator TechnologiesFerroelectric and Negative Capacitance DevicesFerroelectric and Piezoelectric Materials