Highly Reliable, Scalable, and High-Yield HfZrO<sub>x</sub> FRAM by Barrier Layer Engineering and Post-Metal Annealing
Yu-De Lin, Po‐Chun Yeh, Jheng-Yang Dai, Jian-Wei Su, Hsin‐Hui Huang, Chen-Yi Cho, Ying–Tsan Tang, Tuo‐Hung Hou, Shyh-Shyuan Sheu, Wei‐Chung Lo, Shih-Chieh Chang
Abstract
A highly reliable HfZrO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> FRAM technology showing endurance up to $10 ^{12}$ cycles and $10 ^{10}$ cycles at 27°C and 120°C, respectively, in a scaled cell area of $0.36 \mu \mathrm{m}^{2}$ has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.