A High Power Density Double-Side-End Double-Sided Bonding SiC Half-Bridge Power Module
Yiyang Yan, Cai Chen, Zongheng Wu, Jiajia Guan, Jianwei Lv, Yong Cheol Kang
Abstract
Silicon carbide (SiC) power module with lower loop inductance, better dynamic current sharing properties, and better thermal performance will contribute to achieve high power density three-phase inverter in medium-voltage applications. Inspired by the concept of double-side-end busbar, a novel double-side-end double-sided bonding (DSB) power module is proposed in this article. For three chips’ parallel situation, the double-side-end structure decreases parasitic inductance by 40% compared to traditional baseline structure. Besides lower parasitic inductance, a novel structure also has better dynamic current sharing properties. To explain these dynamic current sharing phenomena, an equivalent source inductance model considering mutual inductance is proposed in this article. A 1200-V 10- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\Omega $ </tex-math></inline-formula> SiC double-side-end DSB half-bridge power module is designed, fabricated, and tested. The proposed power module realizes 3-nH power loop inductance. Furthermore, to realize the practical application of the novel power module, a novel compact two-level three-phase integration architecture based on a novel power module is also proposed. With the help of the double-sided direct-cooling method and double-side-end busbar, the proposed architecture will help to realize better performance.