Compact Model for Geometry Dependent Mobility in Nanosheet FETs
Avirup Dasgupta, Shivendra Singh Parihar, Harshit Agarwal, Pragya Kushwaha, Yogesh Singh Chauhan, Chenming Hu
Abstract
We propose an updated compact model for mobility in Nanosheet FETs. This is necessary since Nanosheet FETs exhibit significant mobility degradation with thickness and width scaling caused by centroid shift, changing effective mass due to quantum confinement as well as various crystal orientations of the various conduction planes. The model takes all of these effects into account. It has been implemented in Verilog-A and validated with experimental data. To the best of our knowledge, this is the first compact model capturing the effect of nanosheet scaling on mobility.
Topics & Concepts
NanosheetMaterials scienceScalingElectron mobilityOptoelectronicsElectronic engineeringNanotechnologyEngineeringGeometryMathematicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices