Prediction of half-metallic gap formation and Fermi level position in Co-based Heusler alloy epitaxial thin films through anisotropic magnetoresistance effect
Varun K. Kushwaha, Satoshi Kokado, S. Kasai, Yoshio Miura, Tomoya Nakatani, L. S. R. Kumara, Hiroo Tajiri, T. Furubayashi, K. Hono, Yuya Sakuraba
Abstract
We have investigated the temperature $(T)$ dependence of the anisotropic magnetoresistance (AMR) effect of ${\mathrm{Co}}_{2}{\mathrm{FeGa}}_{0.5}{\mathrm{Ge}}_{0.5}$ (CFGG) epitaxial thin films having different compositions and atomic orders to examine the relation between AMR and the half-metallic electronic structure based on a developed theoretical model. The $T$ dependence of the resistance change (\ensuremath{\Delta}\ensuremath{\rho}) of the AMR normalized at 10 K is minimal in the CFGG films having a standard composition and high atomic order. In contrast, the films having a large atomic disorder due to the Co-rich composition exhibit a large reduction of \ensuremath{\Delta}\ensuremath{\rho} with $T$. Our theoretical model of AMR well explains this behavior; namely, the half-metallic ferromagnets having the Fermi level $({E}_{\mathrm{F}})$ around the center of the half-metallic gap are predicted to show a small $T$ dependence of \ensuremath{\Delta}\ensuremath{\rho} because of no/few localized $d\ensuremath{\downarrow}$ states at ${E}_{\mathrm{F}}$. On the contrary, a large change of \ensuremath{\Delta}\ensuremath{\rho} with $T$ is expected for the half-metallic materials having ${E}_{\mathrm{F}}$ close to gap edges or large in-gap states because of the contribution of thermally excited s-d scattering involving the $d\ensuremath{\downarrow}$ states. Moreover, we have also investigated the variation of \ensuremath{\Delta}\ensuremath{\rho} with $T$ for the thin films of various half-metallic Co-based Heusler alloys and found the behavior that agrees with our theoretical prediction. The present study proves that the formation of a half-metallic gap and the position of ${E}_{\mathrm{F}}$ in a half-metallic material are readily predictable from the $T$ dependence of \ensuremath{\Delta}\ensuremath{\rho} of the AMR effect, which can be a facile way for efficient screening of half-metallic materials.