The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In<sub>2</sub>Se<sub>3</sub>/MoS<sub>2</sub>/graphene heterostructure
Yuzhu Liu, Jian‐Qing Dai, Jin Yuan, Miao-Wei Zhao
Abstract
%. These findings suggest the importance of ferroelectric vdW heterostructures in the design of FTJs and propose a promising route for applying the 2D ferroelectric/semiconductor heterostructures with out-of-plane polarization in high-density ferroelectric memory devices.
Topics & Concepts
Quantum tunnellingGrapheneCondensed matter physicsHeterojunctionMaterials scienceFerroelectricityvan der Waals forcePolarization (electrochemistry)OptoelectronicsNanotechnologyPhysicsQuantum mechanicsChemistryPhysical chemistryDielectricMolecule2D Materials and ApplicationsAdvanced Memory and Neural ComputingPerovskite Materials and Applications