Ultralow‐<i>k</i> Amorphous Boron Nitride Based on Hexagonal Ring Stacking Framework for 300 mm Silicon Technology Platform
Cheng‐Ming Lin, Chuang‐Han Hsu, Wei‐Yu Huang, Vincent Astié, Po‐Hsien Cheng, Yue‐Min Lin, Wei‐Shan Hu, Serena H. Chen, Han‐Yu Lin, Ming‐Yang Li, Blanka Magyari‐Köpe, Chi‐Ming Yang, Jean‐Manuel Decams, Tzu‐Lih Lee, Dong Gui, Han Wang, Wei‐Yen Woon, Pinyen Lin, Jeff Wu, Jang‐Jung Lee, Szuya Sandy Liao, Min Cao
Abstract
Abstract The implementation of ultralow dielectric constant ( k value ≈ 2) materials to reduce signal propagation delay in advanced electronic devices represents a critical challenge in next generations of microelectronics technologies. The introduction of well‐stacked and low polarity molecules that do not compromise film density may lead to improvements and desirable material engineering, as conventional porous SiO x derivatives exhibit detrimental degradation of thermo‐mechanical properties when their k values are further scaled down. This work presents a systematic engineering approach for controlling ultralow‐ k amorphous boron nitride (aBN) deposition on 300 mm Si platforms. The results indicate that aBN grown from borazine precursor exhibits ultralow dielectric constant ≈ 2, high density, excellent mechanical strength, and extended thermodynamic stability. Unintentional boron ion doping during plasma dissociation that may induce artificial reductions of k value on n‐type substrates is alleviated by employing a remote microwave plasma process. Moreover, the adoption of low growth rate processes for ultralow‐ k aBN deposition is found to be critical to provide for the superior mechanical strength and high density, and is attributed to the formation of hexagonal ring stacking frameworks. These results pave the way and offer engineering solutions for new ultralow‐ k material introduction into future semiconductor manufacturing applications.