Recent Advancements in N-polar GaN HEMT Technology
Emre Akso, Kamruzzaman Khan, Henry Collins, Boyu Wang, Robert Hamwey, Tanmay Chavan, Christopher Clymore, Weiyi Li, Oğuz Odabaşı, Matthew Guidry, S. Keller, Elaheh Ahmadi, Steven P. DenBaars, Umesh K. Mishra
Abstract
N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability. In this paper, the authors present a comprehensive review of the evolution of N-polar GaN HEMT technology from the perspective of crystal growth, dielectrics, and metals on N-polar GaN, transistor design, and performance. Specifically, the authors discuss the progress of the N-polar GaN HEMTs toward high-frequency, high-power, and high-efficiency applications with recent record-level performances, demonstrated by the authors, at mmWave frequencies.