Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 10<sup>10</sup> High On/Off Current Ratio and Low Specific On-Resistance
Yue Li, Maojun Wang, Ruiyuan Yin, Jie Zhang, Ming Tao, Bing Xie, Yilong Hao, Xuelin Yang, Cheng P. Wen, Bo Shen
Abstract
In this letter, we report a quasi-vertical GaN Schottky barrier diode (SBD) fabricated on a hetero-epitaxial layer on silicon with low dislocation density and high carrier mobility. The reduction of dislocation is realized by inserting a thin layer with high density of Ga vacancies to promote the dislocation bending. The dislocation density is 1.6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> with a GaN drift layer thickness of 4.5 μm. The fabricated prototype GaN SBD delivers a high on/off current ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> , a high forward current density of 1.6 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> @ <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> V, a low specific on-resistanceof 1.1 mQ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and a low ideality factor of 1.23.