Synthesis of Large-Sized van der Waals Layered MoO<sub>3</sub> Single Crystals with Improved Dielectric Performance
Yaqi Zhu, Beiming Yu, Xin Liu, Jialin Zhang, Zhuofeng Shi, Zhaoning Hu, Saiyu Bu, Chunhu Li, Xiaodong Zhang, Li Lin
Abstract
High Resolution Image Download MS PowerPoint Slide The applications of two-dimensional semiconductors strictly require the reliable integration of ultrathin high-κ dielectric materials on the semiconductor surface to enable fine gate control and low power consumption. As layered oxide materials, MoO 3 can be potentially used as a high-κ two-dimensional material with a larger bandgap and high electron affinity. In this work, relying on the oxidization of molybdenum chlorides, we have synthesized α-MoO 3 single crystals, which can be easily exfoliated into flakes with thicknesses of a few nanometers and sizes of hundreds of micrometers and fine thermal stability. Based on measurement results of conventional metal/insulator/metal devices and graphene based dual-gate devices, the as-received MoO 3 nanosheets exhibit improved dielectric performance, including high dielectric constants and competitive breakdown field strength. Our work demonstrates that MoO 3 with improved crystalline quality is a promising candidate for dielectric materials with a large gate capacitance in future electronics based on two-dimensional materials.