Nonvolatile electrical control of 2D Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> and intrinsic half metallicity in multiferroic hetero-structures
Asif Ilyas, Shuling Xiang, Miaogen Chen, Muhammad Yar Khan, Hua Bai, Pimo He, Yunhao Lu, Renren Deng
Abstract
(CGT) in order to achieve non-volatile memories. Moreover, MXene SCO, being an aided layer in multiferroic CGT/SCO hetero-structures, also modifies the electronic properties of CGT to half metal by its polarized P↓ state. In contrast, the P↑ state does not change the semiconducting nature of CGT. Hence, non-volatile, electrical-controlled switching of ferromagnetic CGT can be engineered by the two opposite ferroelectric states of single layer SCO. Importantly, the magnetic easy axis of CGT switches from in-plane to out-of-plane when the direction of electric polarization of SCO is altered from P↓ to P↑.
Topics & Concepts
SpintronicsFerromagnetismMultiferroicsRealization (probability)Materials sciencevan der Waals forceCondensed matter physicsOptoelectronicsPhysicsFerroelectricityQuantum mechanicsStatisticsMoleculeMathematicsDielectric2D Materials and ApplicationsMultiferroics and related materialsMXene and MAX Phase Materials