Berry curvature engineering by gating two-dimensional antiferromagnets
Shiqiao Du, Peizhe Tang, Jiaheng Li, Zuzhang Lin, Yong Xu, Wenhui Duan, Angel Rubio
Abstract
This paper shows how the Berry curvature of the collinear antiferromagnets can be engineered under external electric fields. The authors uncover the onset of a quantized anomalous Hall conductance with a high Chern number of three in a MnBi${}_{2}$Te${}_{4}$ thin film under a specific electric field. A low power prototype device is proposed for future AFM spintronic applications
Topics & Concepts
Berry connection and curvatureSpintronicsPhysicsCurvatureCondensed matter physicsGatingPower (physics)ConductanceHall effectQuantum mechanicsGeometric phaseFerromagnetismElectric fieldSemiconductorTopological Materials and PhenomenaChemical and Physical Properties of Materials2D Materials and Applications