Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors
Teng Tu, Yichi Zhang, Tianran Li, Yu Jia, Lingmei Liu, Jinxiong Wu, Congwei Tan, Jilin Tang, Yan Liang, Congcong Zhang, Yumin Dai, Yu Han, Keji Lai, Hailin Peng
Abstract
Se is achieved to fabricate discrete electronic components. This facile integration of a high-mobility 2D semiconductor and its high-k native oxide holds high promise for next-generation nanoelectronics.
Topics & Concepts
Materials scienceAmorphous solidDielectricHigh-κ dielectricOptoelectronicsSemiconductorElectron mobilityOxideGate dielectricTransistorNanoelectronicsEquivalent oxide thicknessNanotechnologyGate oxideElectrical engineeringChemistryCrystallographyMetallurgyVoltageEngineering2D Materials and ApplicationsElectronic and Structural Properties of OxidesSemiconductor materials and devices