Toward high-performance and reliable Ge channel devices for 2 nm node and beyond
Hiroaki Arimura, E. Capogreco, Anurag Vohra, Clément Porret, Roger Loo, Erik Rosseel, Andriy Hikavyy, Daire Cott, G. Boccardi, Liesbeth Witters, Geert Eneman, Jérôme Mitard, Nadine Collaert, Naoto Horiguchi
Abstract
This paper describes our recent research progress on high-mobility Ge-channel n/pFETs. Gate stack, junction and contact are the key challenging components of Ge n/pFETs. Through the improvement of those unit modules, the electrical performance and reliability of Ge FinFET and gate-all-around (GAA) nanowire (NW) pFETs have been improved. Remaining technical challenges for the realization of high performance and reliable Ge n/pFETs will be discussed.
Topics & Concepts
OptoelectronicsReliability (semiconductor)Materials scienceNanowireNode (physics)Channel (broadcasting)Logic gateStack (abstract data type)Key (lock)Computer scienceElectrical engineeringElectronic engineeringNanotechnologyEngineeringPhysicsPower (physics)Operating systemQuantum mechanicsStructural engineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications