Broadband Near-Infrared Luminescence in Garnet Y<sub>3</sub>Ga<sub>3</sub>MgSiO<sub>12</sub>: Cr<sup>3+</sup> Phosphors
Lipeng Jiang, Xue Jiang, Liangliang Zhang, Quansheng Liu, Xiaoyun Mi, Zhan Yu, Guocai Lv, Yanjing Su
Abstract
Broadband near-infrared (NIR) phosphors are the critical component of phosphor converted NIR light-emitting diode (LED) light sources. However, there are still a lack of NIR phosphors with excellent external quantum efficiency (EQE) and thermal stability. Here, we report a highly efficient broadband NIR phosphor Y 3 Ga 3 MgSiO 12: Cr 3+ . The optimized phosphor yields an internal quantum efficiency (IQE) and an EQE of 79.9 and 33.7%, respectively. The integrated emission intensity still remains at 84.4% of that at room temperature when heated to 423 K. A broadband NIR LED lamp was made by combining as-prepared phosphor and a blue InGaN LED chip, which shows an output power of 89.8 mW with a photoelectric conversion efficiency of 17.1% driven at 525 mW input power. Our research provides a promising NIR phosphor with high efficiency broadband for the NIR light source.