Litcius/Paper detail

Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications

Evin Yiğit, Ömer Sevgi̇li̇, İkram Orak

2023Applied Physics A10 citationsDOI

Topics & Concepts

Thermionic emissionEquivalent series resistancePhotocurrentDiodeOptoelectronicsMaterials scienceChemistryAluminium nitrideBiasingLayer (electronics)Root mean squareVoltageAluminiumAnalytical Chemistry (journal)NanotechnologyComposite materialElectronElectrical engineeringChromatographyEngineeringPhysicsQuantum mechanicsSemiconductor materials and interfacesGaN-based semiconductor devices and materialsSemiconductor materials and devices
Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications | Litcius