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High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

Hanghai Du, Lu Hao, Zhihong Liu, Zeyu Song, Yachao Zhang, Kui Dang, Jin Zhou, Jing Ning, Zan Li, Jincheng Zhang, Yue Hao

2024Science China Information Sciences5 citationsDOI

Topics & Concepts

Materials scienceComposition (language)OptoelectronicsPhilosophyLinguisticsGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignAdvancements in Semiconductor Devices and Circuit Design
High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz | Litcius