A 220–261 GHz Frequency Multiplier Chain (× 18) With 8-dBm Peak Output Power in 130-nm SiGe
Eşref Türkmen, İbrahim Kağan Aksoyak, Wojciech Dębski, Wolfgang Winkler, Ahmet Çağrı Ulusoy
Abstract
This letter presents a 220–261-GHz frequency multiplier-by-18 chain in a 130-nm SiGe BiCMOS technology. It consists of three amplifiers (12–15, 110–135, and 216–270 GHz), two frequency triplers (36–45 and 108–135 GHz), a third-order Chebyshev bandpass filter (36–45 GHz), and a modified Gilbert-cell-based frequency doubler (216–270 GHz). The peak output power is about 8 dBm at 240 GHz with a 3-dB bandwidth of 41 GHz for an input power of −7 dBm. The unwanted harmonics are suppressed more than 25 dBc over the frequency range of interest. It consumes a dc current of 114.7 mA from a supply voltage of 3.3 V in the quiescent operation and drains a current of 130 mA for an input power of −7 dBm, which results in a drain efficiency of 1.47%. The total circuit occupies an area of 0.58 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (1.35 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times0.43$ </tex-math></inline-formula> mm).