Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI<sub>3–<i>x</i></sub>Cl<sub><i>x</i></sub> Perovskite for RRAM Application
Ujjal Das, Dip Das, Bappi Paul, Tridip Rabha, Soumya Sundar Pattanayak, A. Kanjilal, Snigdha Bhattacharjee, Pranab Kumar Sarkar, Asim Roy
Abstract
Halide perovskite (HP) materials are actively researched for resistive switching (RS) memory devices due to their current–voltage hysteresis along with low-temperature processability, superior charge mobility, and simple fabrication. In this study, all-inorganic RbPbI3 perovskite has been doped with Cl in the halide site and incorporated as a switching media in the Ag/RbPbI3–xClx/ITO structure, since pure RbPbI3 is nonswitchable. Five compositions of the RbPbI3–xClx (x = 0, 0.3, 0.6, 0.9, and 1.2) films are fabricated, and the conductivity was found to be increasing upon increase in Cl concentration, as revealed by dielectric and I–V measurements. The device with a 20% chloride-substituted film exhibits a higher on/off ratio, extended endurance, long retention, and high-density storage ability. Finally, a plausible explanation of the switching mechanism from iodine vacancy-mediated growth of conducting filaments (CFs) is provided using conductive atomic force microscopy (c-AFM). The c-AFM measurements reveal that pure RbPbI3 is insulating in nature, whereas Cl-doped films demonstrate resistive switching behavior.