Two‐Dimensional Cr <sub>3</sub> Te <sub>4</sub> /WS <sub>2</sub> /Fe <sub>3</sub> GeTe <sub>2</sub> /WTe <sub>2</sub> Magnetic Memory with Field‐Free Switching and Low Power Consumption
Kun He, Bailing Li, Bailing Li, Jianhang Nie, Yanglong Hou, Changmeng Huan, Min Hong, Jiantao Du, Chen Yang, Jingmei Tang, Yi Chen, Ya Feng, Shaojun Liu, Su‐Mei Wu, Miaomiao Liu, Hongmei Zhang, Yukun Guo, Ruixia Wu, Jia Li, Xingqiang Liu, Yuan Liu, Zhongming Wei, Lei Liao, Bo Li, Bo Li, Xidong Duan
Abstract
Abstract Spin‐orbit torque (SOT) magnetic memory technology has garnered significant attention due to its ability to enable field‐free switching of magnets with strong perpendicular magnetic anisotropy (PMA). However, concerns regarding power consumption of SOT‐memory are persisting. Here, this work proposes a method to construct magnetic tunnel junction (MTJ) by transferring chemically vapor‐deposited two‐dimensional (2D) Cr 3 Te 4 /WS 2 van der Waals (vdW) heterostructures onto 2D Fe 3 GeTe 2 (FGT) magnet. The robustness and tunability of 2D magnets allow MTJs to exhibit non‐volatility, multiple output states, and impressive cycling durability. MTJs with thin WS 2 barriers (fewer than six layers) exhibit a linear tunneling effect, achieving a low resistance‐area product (RA) of 15.5 kΩ·µm 2 using bilayer WS 2 , which facilitats low‐power operation. Furthermore, the different 2D magnets display a significant anti‐parallel window of up to 8 kOe. SOT‐memory based on the typical MTJ demonstrates a low write consumption of 0.3 mJ and read consumption of 9.7 nJ, marking a significant advancement in 2D vdW SOT‐memory. This research has pointed out a new direction for constructing low power consumption SOT‐memory with PMA field‐free switching.