Advancements and hurdles in contact engineering for miniaturized sub-micrometer oxide semiconductor devices
Joo Hee Jeong, Joo Hee Jeong, Jeong Eun Oh, Dongseon Kim, Daewon Ha, Jae Kyeong Jeong, Jae Kyeong Jeong
Abstract
For DRAM node downscaling, planar oxide-channel transistors must transition to VCT. This review explores strategies to reduce contact resistance, including conductive region formation, n + layer insertion, metal selection, and surface engineering.
Topics & Concepts
Materials scienceNanotechnologyMicrometerSemiconductorOxideEngineering physicsSystems engineeringOptoelectronicsMechanical engineeringEngineeringMetallurgySemiconductor Lasers and Optical DevicesSemiconductor materials and devicesNanowire Synthesis and Applications