A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode with Normally-off Operation, High Mobility and Reliability for 3D Integrated Devices
Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi
Abstract
We have developed ALD InGaOx (IGO) and InSnOx deposition process for channel and electrode, systematically investigated the trade-off among mobility, electrostatics, and reliability in IGO FETs, designed and fabricated multi-gate nanosheet IGO FETs demonstrating normally-off operation, high mobility and reliability, simultaneously, for the first time. This work provides a practical device design guide for developing ALD-based oxide semiconductor FET for 3D integrated devices.
Topics & Concepts
NanosheetMaterials scienceReliability (semiconductor)OptoelectronicsElectrodeAtomic layer depositionNanotechnologySemiconductorElectron mobilityElectronic engineeringThin filmEngineeringChemistryPhysicsPhysical chemistryQuantum mechanicsPower (physics)Semiconductor materials and devicesThin-Film Transistor TechnologiesAdvancements in Semiconductor Devices and Circuit Design