Physical and chemical aspects at the interface and in the bulk of CuInSe<sub>2</sub>-based thin-film photovoltaics
Shogo Ishizuka, Jiro Nishinaga, Kosuke Beppu, Tsuyoshi Maeda, Fuuka Aoyagi, Takahiro Wada, Akira Yamada, Jakapan Chantana, Takahito Nishimura, Takashi Minemoto, Muhammad Monirul Islam, T. Sakurai, Norio Terada
Abstract
films and devices, all-dry processed CISe-based solar cells with high photovoltaic efficiencies, and also fundamental studies on open circuit voltage loss analysis and the energy band structure at the interface are among the main areas of discussion in this review.
Topics & Concepts
PhotovoltaicsThin filmPhotovoltaic systemCopper indium gallium selenide solar cellsMaterials scienceFabricationChalcopyriteBand gapEngineering physicsNanotechnologySolar cellEpitaxyOptoelectronicsSolar energyElectrical engineeringPhysicsLayer (electronics)EngineeringMetallurgyCopperAlternative medicineMedicinePathologyChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesCopper-based nanomaterials and applications