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Designing CMOS compatible efficient ohmic contacts to WSi<sub>2</sub>N<sub>4</sub><i>via</i> surface-engineered Mo<sub>2</sub>B monolayer electrodes

Liemao Cao, Xiaohui Deng, Zhenkun Tang, Rui Tan, Yee Sin Ang

2023Journal of Materials Chemistry C13 citationsDOIOpen Access PDF

Abstract

n-Type ohmic contact with zero tunneling barriers in the vertical direction of the transistor and quasi-ohmic contact with ultra-low SBH in the lateral direction can be obtained by surface engineering.

Topics & Concepts

Ohmic contactMaterials scienceMonolayerTransistorQuantum tunnellingElectrodeOptoelectronicsCMOSSurface (topology)NanotechnologyElectrical engineeringVoltageLayer (electronics)GeometryEngineeringPhysicsQuantum mechanicsMathematicsMXene and MAX Phase Materials2D Materials and ApplicationsSemiconductor materials and interfaces
Designing CMOS compatible efficient ohmic contacts to WSi<sub>2</sub>N<sub>4</sub><i>via</i> surface-engineered Mo<sub>2</sub>B monolayer electrodes | Litcius