Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN
Carlos A. Hernández‐Gutiérrez, Yuriy Kudriavtsev, Dagoberto Cardona, A. G. Hernández, Jorge Luis Camas‐Anzueto
Topics & Concepts
PhotoluminescenceX-ray photoelectron spectroscopyMaterials scienceFluenceIon implantationRaman spectroscopySecondary ion mass spectrometryAnalytical Chemistry (journal)Annealing (glass)OptoelectronicsIonSchottky diodeDiodeChemistryOpticsMetallurgyChemical engineeringOrganic chemistryPhysicsEngineeringChromatographyGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices