4H-SiC Trench MOSFET with low on-resistance at high temperature
Hidefumi Takaya, Tadashi Misumi, Hirokazu Fujiwara, Takahiro Ito
Abstract
High breakdown voltage, low on-resistance at high temperature, and low DS leakage current were realized by a short-channel (0.34μ m) MOSFET provided with a deep P layer (ground potential) formed under trenches spaced at an interval of 2.4 μ m by self-alignment. The BVdss of this MOSFET is 1080 V, the RonS is 1.19 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 25°C and 2.04 mΩcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 175°C, the Vth is 4.0 V, and the Idss is 50 nA at 900 V (□ 9.6 mm). By clarifying the effect of implantation defects on leakage current, this structure was achieved by a simple process that adopts low temperature implantation for all implantation steps.