Giant gauge factor of Van der Waals material based strain sensors
Wenjie Yan, Huei‐Ru Fuh, Yanhui Lv, Ke‐Qiu Chen, Tsung-Yin Tsai, Yuh‐Renn Wu, Tung-Ho Shieh, Kuan‐Ming Hung, Juncheng Li, Duan Zhang, Cormac Ó Coileáin, S. K. Arora, Zhi Wang, Zhaotan Jiang, Ching‐Ray Chang, Han‐Chun Wu
Abstract
Abstract There is an emergent demand for high-flexibility, high-sensitivity and low-power strain gauges capable of sensing small deformations and vibrations in extreme conditions. Enhancing the gauge factor remains one of the greatest challenges for strain sensors. This is typically limited to below 300 and set when the sensor is fabricated. We report a strategy to tune and enhance the gauge factor of strain sensors based on Van der Waals materials by tuning the carrier mobility and concentration through an interplay of piezoelectric and photoelectric effects. For a SnS 2 sensor we report a gauge factor up to 3933, and the ability to tune it over a large range, from 23 to 3933. Results from SnS 2 , GaSe, GeSe, monolayer WSe 2 , and monolayer MoSe 2 sensors suggest that this is a universal phenomenon for Van der Waals semiconductors. We also provide proof of concept demonstrations by detecting vibrations caused by sound and capturing body movements.