Short-circuited stub-loaded spoof surface plasmon polariton transmission lines with flexibly controllable lower out-of-band rejections
Dawei Zhang, Yaxiu Sun, Kuang Zhang, Qun Wu, Tao Jiang
Abstract
This Letter proposes an approach to develop a spoof surface plasmon polariton (SSPP) transmission line (TL) by loading short-circuited (SC) shunt stubs. Lower out-of-band rejections can be flexibly controlled without affecting the upper cutoff frequency by independently modifying the stubs. Dispersion analysis of the SSPP unit is realized by theoretical calculation and circuit simulation to predict the upper cutoff frequency of the proposed SSPP TL simultaneously. Also, parametric sweeping of the SC shunt stubs is performed based on circuit simulation to investigate their impacts on the lower and upper out-of-band rejections of the proposed SSPP TL. In addition, electric field distributions of different types of TLs are simulated and compared to study the transmission characteristics of the proposed SSPP TL. The lower cutoff frequency can be flexibly tuned in a wide range, from 1.2 to 2.1 GHz, in the simulations. The measured 3-dB fractional bandwidth is about 128.1%, covering a range from 1.19 to 5.43 GHz. The numerical and experimental results are compatible, which verifies the feasibility of the proposed approach. This approach can offer more convenience and flexibility for controlling the rejections of the SSPP by introducing up to four tuning parameters. More importantly, the proposed SSPP TL avoids using the substrate integrated waveguide (SIW) technique, which shows the potential to decrease the transverse width ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>0.44</mml:mn> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msub> <mml:mi>λ</mml:mi> <mml:mi>g</mml:mi> </mml:msub> </mml:mrow> </mml:math> ), especially at lower frequencies (e.g., 1.2 GHz), and to reduce the complexity in designing the high-efficiency transition. This work paves the way for the development of novel SSPP-based microwave devices.