Di-Metal Chalcogenides: A New Family of Promising 2-D Semiconductors for High-Performance Transistors
Ateeb Naseer, Keshari Nandan, Amit Agarwal, Somnath Bhowmick, Yogesh Singh Chauhan
Abstract
Transistors, composed of natural atomically thin 2-D semiconductors, have shown great potential for electronics beyond silicon-based complementary metal-oxide-semiconductor technology. Here, we explore the group-11-chalcogen semiconductors ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{M}_{{2}}\text{X}$ </tex-math></inline-formula> : M = Au, Ag; X = S, Se, Te), a recently discovered 2-D family, for transistor applications and assess the performance limit of transistors comprised of these semiconductors using first-principles-based nanoscale device simulations. <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{M}_{{2}}\text{X}$ </tex-math></inline-formula> transistors’ performance is encouraging and competitive among promising 2-D transistors, down to 5 nm gate length. The best performing transistor is n-type, composed of Au <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}\text{S}$ </tex-math></inline-formula> , with a large <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ </tex-math></inline-formula> ratio ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${10}^{{4}}$ </tex-math></inline-formula> ) and good electrostatic control (subthreshold slope (SS) < 70 mV/decade) for 5 nm gate length.