Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC
Ying Chang, Aixia Xiao, Rubing Li, Miaojing Wang, Saisai He, Mingyuan Sun, Lizhong Wang, Chuanyong Qu, Wei Qiu
Abstract
Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample.