Interface engineering with an AlO<sub>x</sub> dielectric layer enabling an ultrastable Ta<sub>3</sub>N<sub>5</sub> photoanode for photoelectrochemical water oxidation
Yongle Zhao, Guiji Liu, Hong Wang, Yuying Gao, Tingting Yao, Wenwen Shi, Can Li
Abstract
The AlO<sub>x</sub> layer not only reduces the formation of interfacial trap states of Ta<sub>3</sub>N<sub>5</sub>, but also generates a field effect to promote efficient separation of photogenerated charges.
Topics & Concepts
Layer (electronics)DielectricWater splittingMaterials sciencePhotoelectrochemistryChemical engineeringOptoelectronicsNanotechnologyCatalysisChemistryPhotocatalysisElectrodeElectrochemistryPhysical chemistryBiochemistryEngineeringAdvanced Photocatalysis TechniquesElectronic and Structural Properties of OxidesMXene and MAX Phase Materials