Multifunctional Half-Floating-Gate Field-Effect Transistor Based on MoS<sub>2</sub>–BN–Graphene van der Waals Heterostructures
Hao Wu, Yinghao Cui, Jinlong Xu, Zhong Yan, Zhenda Xie, Yonghong Hu, Shining Zhu
Abstract
Multifunctional electronic devices that combine logic operation and data storage functions are of great importance in developing next-generation computation. The recent development of van der Waals (vdW) heterostructures based on various two-dimensional (2D) materials have brought exceptional opportunities in designing novel electronic devices. Although various 2D-heterostructure-based electronic devices have been reported, multifunctional devices that can combine logic operations and data storage functions are still quite rare. In this work, we design and fabricate a half-floating-gate field-effect transistor based on MoS2–BN–graphene vdW heterostuctures, which can be used for logic operations as a MOSFET, nonvolatile memory as a floating-gate MOSFET (FG-MOSFET), and rectification as a diode. These results could lay the foundation for various applications based on 2D vdW heterostuctures and inspire the design of next-generation computation beyond the von Neumann architecture.