Structure Optimization of Planar Nanoscale Vacuum Channel Transistor
Ji Xu, Congyuan Lin, Yu Li, Xueliang Zhao, Yongjiao Shi, Xiaobing Zhang
Abstract
Due to its unique structure, discoveries in nanoscale vacuum channel transistors (NVCTs) have demonstrated novel vacuum nanoelectronics. In this paper, the structural parameters of planar-type NVCTs were simulated, which illustrated the influence of emitter tip morphology on emission performance. Based on simulations, we successfully fabricated back-gate and side-gate NVCTs, respectively. Furthermore, the electric properties of NVCTs were investigated, showing the potential to realize the high integration of vacuum transistors.
Topics & Concepts
NanoelectronicsPlanarTransistorMaterials scienceNanoscopic scaleCommon emitterOptoelectronicsChannel (broadcasting)NanotechnologyLogic gateElectrical engineeringEngineeringComputer scienceVoltageComputer graphics (images)Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and Applications