Sinter-free inkjet-printed PEDOT:PSS/WO <sub>3</sub> /PEDOT:PSS flexible valency change memory
Mohamed Delfag, Rajesh Katoch, Johannes Jehn, Yoandris González, Christina Schindler, Andreas Ruëdiger
Abstract
Abstract With the rapid proliferation of consumer electronics in our day to day lives, there is an ever increasing demand for flexible electronic devices which are low cost, easy to fabricate and deliver reliable performance. In this work, we report fabrication of symmetric poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/WO 3 /PEDOT:PSS memory cells by inkjet printing on transparent, flexible polyethylene naphthalate (PEN) substrates. The cells show resistive switching behavior with two stable resistance states. The current conduction across the interface between the PEDOT:PSS electrode and dielectric WO 3 is determined by localized filamentary features which is space charge limited in the high resistance state, facilitated through the migration of oxygen vacancies at low voltages (<2 V) whereas Schottky emission dominates the current conduction for higher voltages (>2 V). The cells show good retentivity and endurance (>6000 cycles). The cells are entirely sinter free and no electroforming is required to activate them. These characteristics make them suitable for the next generation of flexible non-volatile memory devices.