Antisymmetric Magnetoresistance due to Domain-Wall Tilting in Perpendicularly Magnetized Films
Yangtao Su, Yang Meng, Haibin Shi, Li Wang, Xinyu Cao, Ying Zhang, Run‐Wei Li, H. W. Zhao
Abstract
Electrical currents flowing through magnetic domain walls tend to encounter additional extraordinary resistance. At the thin-wall limit, the occurrence of anomalous-field antisymmetric magnetoresistance breaks Onsager symmetry, which seems to be determined by the combination of single-wall and perpendicular-current-injection geometry. However, the delicate magnetic structure and measurement configuration are hard to implement, and the abnormal transport properties observed in multidomain structures are not fully understood. Here, we report the observation of antisymmetric magnetoresistance due to domain-wall tilting in a multidomain structure controlled by a magnetic field gradient. We demonstrate, both experimentally and theoretically, that the anomalous magnetoresistance arises from the nonequilibrium current in the vicinity of tilting domain walls, which are basically governed by the geometry factor of the tilting walls.