Single-Domain and Atomically Flat Surface of κ-Ga<sub>2</sub>O<sub>3</sub> Thin Films on FZ-Grown ε-GaFeO<sub>3</sub> Substrates via Step-Flow Growth Mode
Hiroyuki Nishinaka, Osamu Ueda, Daisuke Tahara, Yusuke Ito, Noriaki Ikenaga, Noriyuki Hasuike, Masahiro Yoshimoto
Abstract
thin film comprised a single domain. TEM analysis revealed that there were no clear dislocations in the observation area. Moreover, high-resolution TEM observation showed that the atomic arrangements of the film and the substrate were continuous without the presence of an intermediate layer along the growth direction and were well-aligned in the in-plane direction.
Topics & Concepts
Materials scienceThin filmFlow (mathematics)Surface (topology)Domain (mathematical analysis)CrystallographyOpticsNanotechnologyGeometryPhysicsChemistryMathematicsMathematical analysisGa2O3 and related materialsElectronic and Structural Properties of OxidesZnO doping and properties