Valley polarization transition driven by biaxial strain in Janus GdClF monolayer
San‐Dong Guo, Xiao-Shu Guo, Xiuxia Cai, Bang‐Gui Liu
Abstract
The valley degree of freedom of carriers in crystals is useful to process information and perform logic operations, and it is a key factor for valley application to realize valley polarization, which can be achieved by strain.
Topics & Concepts
Condensed matter physicsMonolayerCurie temperatureFerromagnetismMaterials sciencePolarization (electrochemistry)JanusPerpendicularAnisotropyPiezoelectricitySpin polarizationStrain engineeringDielectricOpticsPhysicsChemistryOptoelectronicsNanotechnologyComposite materialPhase transitionElectronGeometryQuantum mechanicsMathematicsPhysical chemistry2D Materials and ApplicationsPerovskite Materials and ApplicationsMXene and MAX Phase Materials